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Toshiba Semiconductor and Storage 
TK6Q60W,S1VQ的详细信息
| Datasheets： | |
|---|---|
| TK6Q60W： | |
| Product Photos： | |
| TKxxQ60W,S1VQ： | |
| Standard Package ： | 75 |
| Category： | Discrete Semiconductor Products |
| Family： | FETs - Single |
| Series： | - |
| Packaging ： | Tube |
| FET Type： | MOSFET N-Channel, Metal Oxide |
| FET Feature： | Super Junction |
| Drain to Source Voltage (Vdss)： | 600V |
| Current - Continuous Drain (Id) @ 25°C： | 6.2A (Ta) |
| Rds On (Max) @ Id, Vgs： | 820 mOhm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id： | 3.7V @ 310µA |
| Gate Charge (Qg) @ Vgs： | 12nC @ 10V |
| Input Capacitance (Ciss) @ Vds： | 390pF @ 300V |
| Power - Max： | 60W |
| Mounting Type： | Through Hole |
| Package / Case： | TO-251-3 Stub Leads, IPak |
| Supplier Device Package： | I-Pak |
| Dynamic Catalog： | N-Channel Standard FETs |
| Other Names： | TK6Q60WS1VQ |
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