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Toshiba Semiconductor and Storage 
TK35N65W,S1F的详细信息
| Datasheets： | |
|---|---|
| TK35N65W： | |
| Standard Package ： | 30 |
| Category： | Discrete Semiconductor Products |
| Family： | FETs - Single |
| Series： | - |
| Packaging ： | Tube |
| FET Type： | MOSFET N-Channel, Metal Oxide |
| FET Feature： | Standard |
| Drain to Source Voltage (Vdss)： | 650V |
| Current - Continuous Drain (Id) @ 25°C： | 35A (Ta) |
| Rds On (Max) @ Id, Vgs： | 80 mOhm @ 17.5A, 10V |
| Vgs(th) (Max) @ Id： | 3.5V @ 2.1mA |
| Gate Charge (Qg) @ Vgs： | 100nC @ 10V |
| Input Capacitance (Ciss) @ Vds： | 4100pF @ 300V |
| Power - Max： | 270W |
| Mounting Type： | Through Hole |
| Package / Case： | TO-247-3 |
| Supplier Device Package： | TO-247 |
| Dynamic Catalog： | N-Channel Standard FETs |
| Other Names： | TK35N65W,S1F-NDTK35N65WS1F |
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