型号: | TISP5110H3BJR-S |
厂商: |
Bourns Inc. |
标准: | |
分类: | 半导体 , 分离式半导体 |
描述: | sidacs forward conducting unidirectional |
报错 收藏 赞 |
Datasheet下载地址
本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
TISP5110H3BJR-S的详细信息
Manufacturer: | Bourns |
---|---|
Product Category: | Sidacs |
RoHS: | Yes |
Brand: | Bourns |
Breakover Voltage VBO: | - 110 V |
Breakover Current IBO Max: | +/- 600 mA |
Non Repetitive On-State Current: | 55 A, 60 A |
Rated Repetitive Off-State Voltage VDRM: | - 80 V |
Off-State Leakage Current @ VDRM IDRM: | - 5 uA |
Holding Current Ih Max: | +/- 600 mA |
On-State Voltage: | - 3 V |
Off-State Capacitance CO: | 65 pF to 240 pF |
Maximum Operating Temperature: | + 85 C |
Mounting Style: | SMD/SMT |
Package / Case: | DO-214AA-2 |
Current Rating: | - 5 A |
Minimum Operating Temperature: | - 40 C |
Operating Junction Temperature: | - 40 C to + 150 C |
Packaging: | Reel |
Factory Pack Quantity: | 3000 |
扫码手机查看更方便
同类器件