STW11NM80的详细信息
Manufacturer: | STMicroelectronics |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | STMicroelectronics |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 800 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 11 A |
Rds On - Drain-Source Resistance: | 400 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 150 W |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Channel Mode: | Enhancement |
Fall Time: | 15 ns |
Forward Transconductance - Min: | 8 S |
Minimum Operating Temperature: | - 65 C |
Rise Time: | 17 ns |
Series: | STW11NM80 |
Factory Pack Quantity: | 30 |
Typical Turn-Off Delay Time: | 46 ns |
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