STP7NM80的详细信息
Manufacturer: | STMicroelectronics |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | STMicroelectronics |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 800 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 6.5 A |
Rds On - Drain-Source Resistance: | 1.05 Ohms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 18 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 90 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Channel Mode: | Enhancement |
Fall Time: | 10 ns |
Forward Transconductance - Min: | 4 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 8 ns |
Series: | STP7NM80 |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 35 ns |
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