Image STP260N6F6
型号:

STP260N6F6

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: mosfet N-Ch 60v 0.0016 ohm 180a deepgate VI
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STP260N6F6的详细信息

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Yes
Brand: STMicroelectronics
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 75 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 120 A
Rds On - Drain-Source Resistance: 2.4 mOhms
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 183 nC
Pd - Power Dissipation: 300 W
Mounting Style: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Fall Time: 62.6 ns
Rise Time: 165 ns
Series: STP260N6F6
Factory Pack Quantity: 50

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