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STP25N10F7的详细信息
Manufacturer: | STMicroelectronics |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 25 A |
Rds On - Drain-Source Resistance: | 35 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Qg - Gate Charge: | 14 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 50 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Brand: | STMicroelectronics |
Fall Time: | 4.6 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 14 ns |
Series: | STP25N10 |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 14.8 ns |
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