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STP1N105K3的详细信息
Manufacturer: | STMicroelectronics |
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Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 1.05 kV |
Id - Continuous Drain Current: | 1.4 A |
Rds On - Drain-Source Resistance: | 11 Ohms |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Qg - Gate Charge: | 13 nC |
Pd - Power Dissipation: | 60 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Fall Time: | 50 ns |
Rise Time: | 7 ns |
Series: | STP1N105K3 |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 27 ns |
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