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STMicroelectronics 
STP18N60M2的详细信息
| Manufacturer： | STMicroelectronics |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 600 V |
| Vgs - Gate-Source Breakdown Voltage： | 25 V |
| Id - Continuous Drain Current： | 13 A |
| Rds On - Drain-Source Resistance： | 255 mOhms |
| Configuration： | Single |
| Vgs th - Gate-Source Threshold Voltage： | 3 V |
| Qg - Gate Charge： | 21.5 nC |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 110 W |
| Mounting Style： | Through Hole |
| Package / Case： | TO-220-3 |
| Packaging： | Tube |
| Brand： | STMicroelectronics |
| Fall Time： | 10.6 ns |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 9 ns |
| Series： | STP18N60M2 |
| Factory Pack Quantity： | 50 |
| Typical Turn-Off Delay Time： | 47 ns |
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