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STMicroelectronics 
STI20N65M5的详细信息
| Manufacturer： | STMicroelectronics |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 650 V |
| Vgs - Gate-Source Breakdown Voltage： | 25 V |
| Id - Continuous Drain Current： | 18 A |
| Rds On - Drain-Source Resistance： | 160 mOhms |
| Configuration： | Single |
| Vgs th - Gate-Source Threshold Voltage： | 4 V |
| Qg - Gate Charge： | 36 nC |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 130 W |
| Mounting Style： | Through Hole |
| Package / Case： | I2PAK-3 |
| Packaging： | Tube |
| Brand： | STMicroelectronics |
| Channel Mode： | Enhancement |
| Fall Time： | 7.5 ns |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 7.5 ns |
| Series： | STI20N65M5 |
| Factory Pack Quantity： | 50 |
| Tradename： | MDmesh |
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