Image STGWT80V60DF
型号:

STGWT80V60DF

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: igbt transistors trench gte fieldstop igbt 600v 80a
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STGWT80V60DF的详细信息

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Yes
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.85 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 120 A
Gate-Emitter Leakage Current: 250 nA
Power Dissipation: 469 W
Maximum Operating Temperature: + 175 C
Package / Case: TO-3P
Packaging: Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 80 A
Minimum Operating Temperature: - 55 C
Mounting Style: Through Hole
Series: STGWT80V60
Factory Pack Quantity: 30

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