Image STGWT40H60DLFB
型号:

STGWT40H60DLFB

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: igbt transistors 600v 40a hspd trench gate field-stop igbt
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STGWT40H60DLFB的详细信息

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Yes
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.6 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 80 A
Gate-Emitter Leakage Current: 250 nA
Power Dissipation: 283 W
Maximum Operating Temperature: + 175 C
Package / Case: TO-3P
Packaging: Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 40 A
Minimum Operating Temperature: - 55 C
Mounting Style: Through Hole
Series: STGWT40H60DLFB
Factory Pack Quantity: 30