STGW80H65DFB的详细信息
Manufacturer: | STMicroelectronics |
---|---|
Product Category: | IGBT Transistors |
RoHS: | Yes |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Maximum Gate Emitter Voltage: | 20 V |
Continuous Collector Current at 25 C: | 120 A |
Gate-Emitter Leakage Current: | 250 nA |
Power Dissipation: | 469 W |
Maximum Operating Temperature: | + 175 C |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Brand: | STMicroelectronics |
Continuous Collector Current Ic Max: | 80 A |
Minimum Operating Temperature: | - 55 C |
Mounting Style: | Through Hole |
Series: | STGW80H65 |
Factory Pack Quantity: | 30 |
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