Image STGP35N35LZ
型号:

STGP35N35LZ

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: igbt transistors eas 450mj 345v powermesh igbt
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Datasheet下载地址

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STGP35N35LZ的详细信息

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Yes
Brand: STMicroelectronics
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 40 A
Gate-Emitter Leakage Current: 830 uA
Power Dissipation: 176 W
Maximum Operating Temperature: + 175 C
Package / Case: TO-220
Packaging: Tube
Minimum Operating Temperature: - 55 C
Mounting Style: Through Hole
Series: STGP35N35LZ
Factory Pack Quantity: 50