Image STGB20N40LZ
型号:

STGB20N40LZ

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: igbt transistors 390v igbt eas 300mj internally clamped
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >> 厂商下载2 >>

STGB20N40LZ的详细信息

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Yes
Configuration: Single
Collector- Emitter Voltage VCEO Max: 425 V
Collector-Emitter Saturation Voltage: 1.5 V
Maximum Gate Emitter Voltage: 16 V
Gate-Emitter Leakage Current: 625 uA
Power Dissipation: 150 W
Maximum Operating Temperature: + 175 C
Package / Case: D2PAK-3
Packaging: Reel
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 25 A
Minimum Operating Temperature: - 55 C
Mounting Style: SMD/SMT
Series: STGB20N40LZ
Factory Pack Quantity: 1000

STGB20N40LZ相关文档