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型号: | STGB14NC60KDT4 |
厂商: |
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标准: | ![]() ![]() |
分类: | 半导体 , 分离式半导体 |
描述: | igbt transistors powermesh" igbt |
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STGB14NC60KDT4的详细信息
Manufacturer: | STMicroelectronics |
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Product Category: | IGBT Transistors |
RoHS: | Yes |
Brand: | STMicroelectronics |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 2.1 V |
Maximum Gate Emitter Voltage: | +/- 20 V |
Gate-Emitter Leakage Current: | 2 A |
Maximum Operating Temperature: | + 150 C |
Package / Case: | D2PAK-3 |
Packaging: | Reel |
Continuous Collector Current Ic Max: | 25 A |
Minimum Operating Temperature: | - 55 C |
Mounting Style: | SMD/SMT |
Series: | STGB14NC60KD |
Factory Pack Quantity: | 1000 |
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