型号: | STGB10NB37LZ |
厂商: |
STMicroelectronics |
标准: | |
分类: | 半导体 , 分离式半导体 |
描述: | igbt transistors 10 A 410v internally clamped igbt |
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STGB10NB37LZ的详细信息
Manufacturer: | STMicroelectronics |
---|---|
Product Category: | IGBT Transistors |
RoHS: | Yes |
Brand: | STMicroelectronics |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1.8 V |
Collector-Emitter Saturation Voltage: | 1.2 V |
Maximum Gate Emitter Voltage: | 16 V |
Continuous Collector Current at 25 C: | 20 A |
Gate-Emitter Leakage Current: | 700 uA |
Power Dissipation: | 125 W |
Maximum Operating Temperature: | + 150 C |
Package / Case: | D2PAK-3 |
Packaging: | Tube |
Continuous Collector Current Ic Max: | 20 A |
Minimum Operating Temperature: | - 65 C |
Mounting Style: | SMD/SMT |
Series: | STGB10NB37LZ |
Factory Pack Quantity: | 1000 |
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