Image STGB10NB37LZ
型号:

STGB10NB37LZ

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: igbt transistors 10 A 410v internally clamped igbt
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STGB10NB37LZ的详细信息

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Yes
Brand: STMicroelectronics
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1.8 V
Collector-Emitter Saturation Voltage: 1.2 V
Maximum Gate Emitter Voltage: 16 V
Continuous Collector Current at 25 C: 20 A
Gate-Emitter Leakage Current: 700 uA
Power Dissipation: 125 W
Maximum Operating Temperature: + 150 C
Package / Case: D2PAK-3
Packaging: Tube
Continuous Collector Current Ic Max: 20 A
Minimum Operating Temperature: - 65 C
Mounting Style: SMD/SMT
Series: STGB10NB37LZ
Factory Pack Quantity: 1000

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