Image STF6N60M2
型号:

STF6N60M2

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: mosfet N-CH 600v 1.06ohm 4.5A mdmesh II
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STF6N60M2的详细信息

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Breakdown Voltage: 25 V
Id - Continuous Drain Current: 4.5 A
Rds On - Drain-Source Resistance: 1.06 Ohms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 8 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 20 W
Mounting Style: Through Hole
Package / Case: TO-220FP-3
Packaging: Tube
Brand: STMicroelectronics
Fall Time: 22.5 ns
Minimum Operating Temperature: - 55 C
Rise Time: 7.4 ns
Series: STF6N60M2
Factory Pack Quantity: 50
Typical Turn-Off Delay Time: 24 ns

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