Image STB23NM60ND
型号:

STB23NM60ND

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: mosFET N-CH 600v 0.150 ohm 19.5A fdmesh II mos
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STB23NM60ND的详细信息

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Yes
Brand: STMicroelectronics
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Breakdown Voltage: 25 V
Id - Continuous Drain Current: 19.5 A
Rds On - Drain-Source Resistance: 180 mOhms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 150 W
Mounting Style: SMD/SMT
Package / Case: D2PAK-2
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 40 ns
Minimum Operating Temperature: - 55 C
Rise Time: 45 ns
Series: STB23NM60ND
Factory Pack Quantity: 1000
Typical Turn-Off Delay Time: 90 ns

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