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STB23NM60ND的详细信息
Manufacturer: | STMicroelectronics |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | STMicroelectronics |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Breakdown Voltage: | 25 V |
Id - Continuous Drain Current: | 19.5 A |
Rds On - Drain-Source Resistance: | 180 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 150 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 40 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 45 ns |
Series: | STB23NM60ND |
Factory Pack Quantity: | 1000 |
Typical Turn-Off Delay Time: | 90 ns |
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