Image STB23NM60N
型号:

STB23NM60N

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 600v 19a d2pak
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STB23NM60N的详细信息

Datasheets:
STx23NM60N:
Product Photos:
TO-263:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: MDmesh™ II
Packaging : Cut Tape (CT)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) @ Vds: 2050pF @ 50V
Power - Max: 150W
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Other Names: 497-7943-1