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型号:

SQM120N04-1M9-GE3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 40v 120a to263
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SQM120N04-1M9-GE3的详细信息

Datasheets:
SQM120N04-1M9-GE3:
Standard Package : 800
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: TrenchFET®
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) @ Vds: 8790pF @ 25V
Power - Max: 300W
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263