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Infineon Technologies 
SPP10N10L的详细信息
| Datasheets： | |
|---|---|
| SPI,SPP10N10L： | |
| Product Photos： | |
| TO-220-3： | |
| PCN Obsolescence/ EOL： | |
| Multiple Devices 22/Feb/2008： | |
| Standard Package ： | 500 |
| Category： | Discrete Semiconductor Products |
| Family： | FETs - Single |
| Series： | SIPMOS® |
| Packaging ： | Tube |
| FET Type： | MOSFET N-Channel, Metal Oxide |
| FET Feature： | Logic Level Gate |
| Drain to Source Voltage (Vdss)： | 100V |
| Current - Continuous Drain (Id) @ 25°C： | 10.3A (Tc) |
| Rds On (Max) @ Id, Vgs： | 154 mOhm @ 8.1A, 10V |
| Vgs(th) (Max) @ Id： | 2V @ 21µA |
| Gate Charge (Qg) @ Vgs： | 22nC @ 10V |
| Input Capacitance (Ciss) @ Vds： | 444pF @ 25V |
| Power - Max： | 50W |
| Mounting Type： | Through Hole |
| Package / Case： | TO-220-3 |
| Supplier Device Package： | PG-TO220-3 |
| Other Names： | SP000013849SPP10N10LX |
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