Image SISA04DN-T1-GE3
型号:

SISA04DN-T1-GE3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体分离式半导体
描述: mosfet 30v 2.15mohm@10v 40a N-Ch G-IV
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SISA04DN-T1-GE3的详细信息

Manufacturer: Vishay
Product Category: MOSFET
RoHS: Yes
Brand: Vishay / Siliconix
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Breakdown Voltage: + 20 V, - 16 V
Id - Continuous Drain Current: 40 A
Rds On - Drain-Source Resistance: 2.15 mOhms
Configuration: Single
Qg - Gate Charge: 22.5 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 52 W
Mounting Style: SMD/SMT
Package / Case: PowerPAK 1212-8
Packaging: Reel
Minimum Operating Temperature: - 55 C
Series: SISAxxDN
Factory Pack Quantity: 3000
Part # Aliases: SISA04DN-GE3