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SISA04DN-T1-GE3的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Breakdown Voltage: | + 20 V, - 16 V |
Id - Continuous Drain Current: | 40 A |
Rds On - Drain-Source Resistance: | 2.15 mOhms |
Configuration: | Single |
Qg - Gate Charge: | 22.5 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 52 W |
Mounting Style: | SMD/SMT |
Package / Case: | PowerPAK 1212-8 |
Packaging: | Reel |
Minimum Operating Temperature: | - 55 C |
Series: | SISAxxDN |
Factory Pack Quantity: | 3000 |
Part # Aliases: | SISA04DN-GE3 |
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