Image SIR850DP-T1-GE3
型号:

SIR850DP-T1-GE3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体分离式半导体
描述: mosfet 25v 30a 41.7W 7.0mohm @ 10v
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SIR850DP-T1-GE3的详细信息

Manufacturer: Vishay
Product Category: MOSFET
RoHS: Yes
Brand: Vishay / Siliconix
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 30 A
Rds On - Drain-Source Resistance: 7.3 mOhms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 41.7 W
Mounting Style: SMD/SMT
Package / Case: PowerPAK SO-8
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 11 ns
Forward Transconductance - Min: 85 S
Minimum Operating Temperature: - 55 C
Rise Time: 20 ns
Series: SIRxxxDP
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 30 ns
Part # Aliases: SIR850DP-GE3