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SIHP22N60S-E3的详细信息
Manufacturer: | Vishay |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 22 A |
Rds On - Drain-Source Resistance: | 160 mOhms |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 75 nC |
Pd - Power Dissipation: | 250 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Fall Time: | 59 ns |
Forward Transconductance - Min: | 9.4 S |
Rise Time: | 68 ns |
Series: | SIHxxxN60x |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 77 ns |
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