Image SIHG30N60E-E3
型号:

SIHG30N60E-E3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 600v 29a to247ac
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >>

SIHG30N60E-E3的详细信息

Datasheets:
SIHP30N60E:
Product Photos:
TO-247-3:
Product Training Modules:
High Voltage MOSFET E Series and PFC Device Selection:
Standard Package : 500
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Tube
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) @ Vds: 2600pF @ 100V
Power - Max: 250W
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Dynamic Catalog: N-Channel Standard FETs
Other Names: SIHG30N60EE3