Image SIHG22N60E-GE3
型号:

SIHG22N60E-GE3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体分离式半导体
描述: mosfet 600v 180mohm@10v 21a N-Ch E-srs
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SIHG22N60E-GE3的详细信息

Manufacturer: Vishay
Product Category: MOSFET
RoHS: Yes
Brand: Vishay / Siliconix
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 21 A
Rds On - Drain-Source Resistance: 180 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 86 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 227 W
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Fall Time: 54 ns
Forward Transconductance - Min: 6.4 S
Minimum Operating Temperature: - 55 C
Rise Time: 68 ns
Series: SIHxxxN60x
Factory Pack Quantity: 25
Typical Turn-Off Delay Time: 59 ns