Image SIHF12N60E-GE3
型号:

SIHF12N60E-GE3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体分离式半导体
描述: mosfet 600v 380mohms@10v 12a N-Ch E-srs
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SIHF12N60E-GE3的详细信息

Manufacturer: Vishay
Product Category: MOSFET
RoHS: Yes
Brand: Vishay / Siliconix
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 12 A
Rds On - Drain-Source Resistance: 380 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V
Qg - Gate Charge: 58 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 33 W
Mounting Style: Through Hole
Package / Case: TO-220FP-3
Packaging: Bulk
Channel Mode: Enhancement
Fall Time: 19 ns
Forward Transconductance - Min: 3.8 S
Minimum Operating Temperature: - 55 C
Rise Time: 19 ns
Series: SIHxxxN60x
Typical Turn-Off Delay Time: 35 ns

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