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SIHF12N60E-GE3的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 12 A |
Rds On - Drain-Source Resistance: | 380 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 2 V to 4 V |
Qg - Gate Charge: | 58 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 33 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220FP-3 |
Packaging: | Bulk |
Channel Mode: | Enhancement |
Fall Time: | 19 ns |
Forward Transconductance - Min: | 3.8 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 19 ns |
Series: | SIHxxxN60x |
Typical Turn-Off Delay Time: | 35 ns |
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