Image SI8461DB-T2-E1
型号:

SI8461DB-T2-E1

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体分离式半导体
描述: mosfet 20v 3.7A 1.8W 100mohm @ 4.5V
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SI8461DB-T2-E1的详细信息

Manufacturer: Vishay
Product Category: MOSFET
RoHS: Yes
Brand: Vishay / Siliconix
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 20 V
Vgs - Gate-Source Breakdown Voltage: 8 V
Id - Continuous Drain Current: - 3.7 A
Rds On - Drain-Source Resistance: 136 mOhms
Configuration: Single
Qg - Gate Charge: 9.5 nC
Maximum Operating Temperature: + 85 C
Pd - Power Dissipation: 1.8 W
Mounting Style: SMD/SMT
Package / Case: Micro Foot-4 1x1
Packaging: Reel
Fall Time: 10 ns
Forward Transconductance - Min: 7 S
Minimum Operating Temperature: - 40 C
Rise Time: 25 ns
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 35 ns