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SI8461DB-T2-E1的详细信息
Manufacturer: | Vishay |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | - 20 V |
Vgs - Gate-Source Breakdown Voltage: | 8 V |
Id - Continuous Drain Current: | - 3.7 A |
Rds On - Drain-Source Resistance: | 136 mOhms |
Configuration: | Single |
Qg - Gate Charge: | 9.5 nC |
Maximum Operating Temperature: | + 85 C |
Pd - Power Dissipation: | 1.8 W |
Mounting Style: | SMD/SMT |
Package / Case: | Micro Foot-4 1x1 |
Packaging: | Reel |
Fall Time: | 10 ns |
Forward Transconductance - Min: | 7 S |
Minimum Operating Temperature: | - 40 C |
Rise Time: | 25 ns |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 35 ns |
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