SI7812DN-T1-GE3的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 75 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 7.2 A |
Rds On - Drain-Source Resistance: | 37 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 3.8 W |
Mounting Style: | SMD/SMT |
Package / Case: | PowerPAK 1212-8 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 50 ns, 10 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 130 ns, 20 ns |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 20 ns, 35 ns |
Part # Aliases: | SI7812DN-GE3 |
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