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SI5853DDC-T1-E3的详细信息
Manufacturer: | Vishay |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | - 20 V |
Vgs - Gate-Source Breakdown Voltage: | 8 V |
Id - Continuous Drain Current: | 2.9 A |
Rds On - Drain-Source Resistance: | 85 mOhms |
Configuration: | Single with Schottky Diode |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1.2 W |
Mounting Style: | SMD/SMT |
Package / Case: | 1206-8 ChipFET |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 17 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 17 ns |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 21 ns |
Part # Aliases: | SI5853DDC-E3 |
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