Image SI2308DS-T1-E3
型号:

SI2308DS-T1-E3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 60v 2A sot23-3
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SI2308DS-T1-E3的详细信息

Datasheets:
SI2308DS:
Product Photos:
SOT-23-3:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: TrenchFET®
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) @ Vds: 240pF @ 25V
Power - Max: 1.25W
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Other Names: SI2308DS-T1-E3TR