型号:

SI2302DDS-T1-GE3

厂商: Vishay Siliconix Vishay Siliconix
标准:
分类: 半导体分离式半导体
描述: mosfet 20v 2.9A 0.86w 57mohm @ 4.5V
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SI2302DDS-T1-GE3的详细信息

Manufacturer: Vishay
Product Category: MOSFET
RoHS: Yes
Brand: Vishay / Siliconix
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs - Gate-Source Breakdown Voltage: 8 V
Id - Continuous Drain Current: 2.9 A
Rds On - Drain-Source Resistance: 57 mOhms
Vgs th - Gate-Source Threshold Voltage: 0.85 V
Qg - Gate Charge: 3.5 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 710 mW
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 7 ns
Forward Transconductance - Min: 13 S
Minimum Operating Temperature: - 55 C
Rise Time: 7 ns
Series: SI2302DDS
Tradename: TrenchFET
Typical Turn-Off Delay Time: 30 ns

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