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Toshiba Semiconductor and Storage 
RN2103MFV(TPL3)的详细信息
| Datasheets： | |
|---|---|
| RN210(1-6)MFV： | |
| Product Photos： | |
| VESM： | |
| Standard Package ： | 8,000 |
| Category： | Discrete Semiconductor Products |
| Family： | Transistors (BJT) - Single, Pre-Biased |
| Series： | - |
| Packaging ： | Tape & Reel (TR) |
| Transistor Type： | PNP - Pre-Biased |
| Current - Collector (Ic) (Max)： | 100mA |
| Voltage - Collector Emitter Breakdown (Max)： | 50V |
| Resistor - Base (R1) (Ohms)： | 22k |
| Resistor - Emitter Base (R2) (Ohms)： | 22k |
| DC Current Gain (hFE) (Min) @ Ic, Vce： | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic： | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max)： | 500nA |
| Frequency - Transition： | 250MHz |
| Power - Max： | 150mW |
| Mounting Type： | Surface Mount |
| Package / Case： | SOT-723 |
| Supplier Device Package： | VESM |
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