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| 型号： | RN1102MFV,L3F(B |
| 厂商： |
 Toshiba Semiconductor and Storage |
| 标准： |   |
| 分类： | 半导体 ， 晶体管(BJT) - 单路﹐预偏压式 |
| 描述： | transistor npn vesm |
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Datasheet下载地址
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RN1102MFV,L3F(B的详细信息
| Datasheets： | |
|---|---|
| RN1101MFV - RN1106MFV： | |
| Product Photos： | |
| VESM： | |
| Standard Package ： | 8,000 |
| Category： | Discrete Semiconductor Products |
| Family： | Transistors (BJT) - Single, Pre-Biased |
| Series： | - |
| Packaging ： | Tape & Reel (TR) |
| Transistor Type： | NPN - Pre-Biased |
| Current - Collector (Ic) (Max)： | 100mA |
| Voltage - Collector Emitter Breakdown (Max)： | 50V |
| Resistor - Base (R1) (Ohms)： | 10k |
| Resistor - Emitter Base (R2) (Ohms)： | 10k |
| DC Current Gain (hFE) (Min) @ Ic, Vce： | 50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic： | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max)： | 500nA |
| Frequency - Transition： | - |
| Power - Max： | 150mW |
| Mounting Type： | Surface Mount |
| Package / Case： | SOT-723 |
| Supplier Device Package： | VESM |
| Other Names： | RN1102MFV(TL3,T)RN1102MFV(TL3T)TRRN1102MFV(TL3T)TR-NDRN1102MFVL3F(BTRRN1102MFVTL3T |
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