Image RJK60S7DPQ-E0#T2
型号:

RJK60S7DPQ-E0#T2

厂商: Renesas Electronics America
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 600v 30a TO-247
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RJK60S7DPQ-E0#T2的详细信息

Datasheets:
RJK60S7DPQ-E0:
Product Photos:
TO-247-3:
PCN Obsolescence/ EOL:
Multiple Devices 15/Aug/2013:
Standard Package : 100
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Tube
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) @ Vds: 2300pF @ 25V
Power - Max: 227.2W
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Other Names: RJK60S7DPQE0T2