Image PTFA220081M V4-T
型号:

PTFA220081M V4-T

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: transistors RF mosfet rfp-ldmos GOldmos 8
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PTFA220081M V4-T的详细信息

Manufacturer: Infineon
Product Category: Transistors RF MOSFET
RoHS: Yes
Configuration: Single
Transistor Polarity: N-Channel
Frequency: 0.7 GHz to 2.2 GHz
Gain: 17 dB
Output Power: 8 W
Vds - Drain-Source Breakdown Voltage: 65 V
Id - Continuous Drain Current: 100 mA
Vgs - Gate-Source Breakdown Voltage: 12 V
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: PG-SON-10
Packaging: Reel
Brand: Infineon Technologies
Series: PTFA220081
Factory Pack Quantity: 500
Part # Aliases: PTFA220081MV4XUMA1 SP000707920