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PSMN7R0-30YLC,115的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 61 A |
Rds On - Drain-Source Resistance: | 7.1 mOhms |
Vgs th - Gate-Source Threshold Voltage: | 1.58 V |
Qg - Gate Charge: | 16 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 48 W |
Mounting Style: | SMD/SMT |
Package / Case: | LFPAK33-4 |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Fall Time: | 7.5 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 18 ns |
Factory Pack Quantity: | 1500 |
PSMN7R0-30YLC,115相关文档
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- SPICE model: PSMN7R0-30YLC Spice model (v.1.0)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Application note: LFPAK MOSFET thermal design guide (v.2.0)
- Application note: LFPAK MOSFET thermal design guide - Part 2 (v.2.0)
- Brochure: NextPower MOSFETs (v.2.1)
- Thermal model: PSMN7R0-30YLC Thermal model (v.1.0)
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