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PSMN2R2-40PS,127的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Id - Continuous Drain Current: | 100 A |
Rds On - Drain-Source Resistance: | 1.75 mOhms |
Pd - Power Dissipation: | 306 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Fall Time: | 25.2 ns |
Rise Time: | 40.4 ns |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 66.6 ns |
PSMN2R2-40PS,127相关文档
- PCN: Advance Product Change Notification
- SPICE model: PSMN2R2-40PS SPICE model (v.1.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Thermal model: PSMN2R2-40PS Thermal model (v.1.0)
- Leaflet: High performance Trench 6 MOSFETs in a TO220 (v.1.1)
- PCN: Customer Information Notification
- PCN: Final Product Change Notification
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