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PSMN2R0-30YL,115的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 100 A |
Rds On - Drain-Source Resistance: | 2 mOhms |
Configuration: | Single Triple Source |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 97 W |
Mounting Style: | SMD/SMT |
Package / Case: | LFPAK-4 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 28 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 65 ns |
Factory Pack Quantity: | 1500 |
Typical Turn-Off Delay Time: | 63 ns |
Part # Aliases: | PSMN2R0-30YL T/R |
PSMN2R0-30YL,115相关文档
- Application note: LFPAK MOSFET thermal design guide (v.2.0)
- SPICE model: PSMN2R0-30YL SPICE model (v.1.0)
- Leaflet: 25 V to 100 V MOSFETs in Power-SO8 (v.1.0)
- Application note: Logic level VGS ratings for NXP power MOSFETs (v.1.0)
- Thermal model: PSMN2R0-30YL Thermal model (v.1.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Application note: LFPAK MOSFET thermal design guide - Part 2 (v.2.0)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- SPICE model: PSMN2R0_30YL SPICE model (v.1.3)
- Leaflet: LFPAK - The Toughest Power SO8 (v.1.2)
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