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PSMN1R5-40PS,127的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 120 A |
Rds On - Drain-Source Resistance: | 1.6 mOhms |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 133 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 338 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Brand: | NXP Semiconductors |
Minimum Operating Temperature: | - 55 C |
Factory Pack Quantity: | 50 |
PSMN1R5-40PS,127相关文档
- PCN: Advance Product Change Notification
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Thermal model: PSMN1R5-40PS Thermal model (v.1.0)
- SPICE model: PSMN1R5_40PS Spice Model (v.1.0)
- PCN: Customer Information Notification
- PCN: Final Product Change Notification
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