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PSMN028-100YS,115的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 42 A |
Rds On - Drain-Source Resistance: | 52 mOhms |
Configuration: | Single Triple Source |
Vgs th - Gate-Source Threshold Voltage: | 4.7 V |
Qg - Gate Charge: | 33 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 89 W |
Mounting Style: | SMD/SMT |
Package / Case: | LFPAK-4 |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Channel Mode: | Enhancement |
Fall Time: | 12 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 14 ns |
Factory Pack Quantity: | 1500 |
Typical Turn-Off Delay Time: | 33 ns |
PSMN028-100YS,115相关文档
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- SPICE model: PSMN028-100YS Spice model (v.1.0)
- Application note: LFPAK MOSFET thermal design guide (v.2.0)
- Thermal model: PSMN028-100YS Thermal model (v.1.0)
- Application note: LFPAK MOSFET thermal design guide - Part 2 (v.2.0)
- PCN: Final Product Change Notification
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