Image PMWD19UN,518
型号:

PMWD19UN,518

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体FET - 阵列
描述: mosfet 2N-CH 30v 5.6A 8tssop
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PMWD19UN,518的详细信息

Datasheets:
PMWD19UN:
Product Photos:
8-TSSOP:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: FETs - Arrays
Series: TrenchMOS™
Packaging : Cut Tape (CT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) @ Vds: 1478pF @ 10V
Power - Max: 2.3W
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Other Names: 568-2361-1