Image PMDXB600UNE
型号:

PMDXB600UNE

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体FET - 阵列
描述: mosfet 2N-CH 20v 0.6A 6dfn
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PMDXB600UNE的详细信息

Datasheets:
PMDXB600UNE:
Product Photos:
6-XFDFN Exposed Pad:
Featured Product:
DFN1010 Transistors in a 1.1 mm² Leadless Plastic Package:
Standard Package : 5,000
Category: Discrete Semiconductor Products
Family: FETs - Arrays
Series: TrenchFET®
Packaging : Tape & Reel (TR)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 21.3pF @ 10V
Power - Max: 265mW
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: 6-DFN (1.1x1)
Dynamic Catalog: N-Channel Logic Level Gate FETs
Other Names: 568-10941-2934067655147