Image PMDPB58UPE,115
型号:

PMDPB58UPE,115

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体FET - 阵列
描述: mosfet 2P-CH 20v 3.6A huson6
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PMDPB58UPE,115的详细信息

Datasheets:
PMDPB58UPE:
Product Photos:
SOT1118:
Featured Product:
NXP - RDS(on) MOSFETs in Ultra-Small Packages:
PCN Packaging:
Lighter Reels 02/Jan/2014:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Arrays
Series: -
Packaging : Tape & Reel (TR)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 67 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 804pF @ 10V
Power - Max: 515mW
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-HUSON (2X2)
Dynamic Catalog: P-Channel Logic Level Gate FETs
Other Names: 568-10442-2934066845115PMDPB58UPE,115-ND