Image PMBF170,235
型号:

PMBF170,235

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体分离式半导体
描述: MOSfet N-channel trenchmos intermed level fet
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PMBF170,235的详细信息

Manufacturer: NXP
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 75 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 300 mA
Rds On - Drain-Source Resistance: 2.8 Ohms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 2 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 830 mW
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Packaging: Reel
Brand: NXP Semiconductors
Channel Mode: Enhancement
Forward Transconductance - Min: 100 mS
Minimum Operating Temperature: - 65 C
Factory Pack Quantity: 10000
Typical Turn-Off Delay Time: 12 ns

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