NXP Semiconductors 
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PHT4NQ10T,135的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Brand： | NXP Semiconductors |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 100 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 3.5 A |
| Rds On - Drain-Source Resistance： | 250 mOhms |
| Configuration： | Single Dual Drain |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 6.9 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | SC-73-4 |
| Packaging： | Reel |
| Channel Mode： | Enhancement |
| Fall Time： | 11 ns |
| Minimum Operating Temperature： | - 65 C |
| Rise Time： | 13 ns |
| Factory Pack Quantity： | 4000 |
| Typical Turn-Off Delay Time： | 20 ns |
| Part # Aliases： | /T3 PHT4NQ10T |
PHT4NQ10T,135相关文档
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Line card: Broad small-signal MOSFET portfolio to suit a wide range of applications (v.2.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- PCN: Customer Information Notification
- PCN: Customer Information Notification
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