Image PHK12NQ10T,518
型号:

PHK12NQ10T,518

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 100v 11.6A sot96-1
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PHK12NQ10T,518的详细信息

Datasheets:
PHK12NQ10T:
Product Photos:
8-SOIC:
PCN Obsolescence/ EOL:
Multiple Devices 25/Dec/2013:
Standard Package : 2,500
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: TrenchMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) @ Vds: 1965pF @ 25V
Power - Max: 8.9W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Other Names: 934057347518PHK12NQ10T /T3PHK12NQ10T /T3-ND

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