Image PD85006-E
型号:

PD85006-E

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: transistors RF mosfet RF power transistor ldmost N-ch plastic
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PD85006-E的详细信息

Manufacturer: STMicroelectronics
Product Category: Transistors RF MOSFET
RoHS: Yes
Brand: STMicroelectronics
Configuration: Single
Transistor Polarity: N-Channel
Frequency: 1 GHz
Gain: 15 dB at 870 MHz
Output Power: 6 W
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 2 A
Vgs - Gate-Source Breakdown Voltage: 15 V
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: PowerSO-10RF (Formed Lead)
Packaging: Tube
Pd - Power Dissipation: 36.5 W
Series: PD85006-E
Factory Pack Quantity: 50