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NXP Semiconductors 
Datasheet下载地址
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PBSS8110Z,135的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | Transistors Bipolar - BJT |
| RoHS： | Yes |
| Brand： | NXP Semiconductors |
| Configuration： | Single |
| Transistor Polarity： | NPN |
| Collector- Base Voltage VCBO： | 120 V |
| Collector- Emitter Voltage VCEO Max： | 100 V |
| Emitter- Base Voltage VEBO： | 5 V |
| Maximum DC Collector Current： | 1 A |
| Gain Bandwidth Product fT： | 100 MHz |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | SMD/SMT |
| Package / Case： | SC-73 |
| DC Collector/Base Gain hfe Min： | 150 at 1 mA at 10 V, 150 at 250 mA at 10 V, 100 at 0.5 A at 10 V, 80 at 1 A at 10 V |
| DC Current Gain hFE Max： | 150 at 1 mA at 10 V |
| Maximum Power Dissipation： | 1400 mW |
| Minimum Operating Temperature： | - 65 C |
| Packaging： | Reel |
| Factory Pack Quantity： | 4000 |
| Part # Aliases： | /T3 PBSS8110Z |
PBSS8110Z,135相关文档
- Application note: Thermal behavior of small-signal discretes on multilayer PCBs (v.1.0)
- Application note: Increased circuit efficiency, less required board space and saved money by replacing power transistors with low VCEsat (BISS) transistors (v.1.0)
- SPICE model: PBSS8110Z SPICE model (v.1.3)
- PCN: Customer Information Notification
- PCN: Customer Information Notification
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